Facile and Thermally-Stable Al2O3 Passivation by Using In-Situ TiO2 as a Capping Layer for Boron Emitter of N-Type Silicon

Published 2017 View Full Article

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Title
Facile and Thermally-Stable Al2O3 Passivation by Using In-Situ TiO2 as a Capping Layer for Boron Emitter of N-Type Silicon
Authors
Keywords
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Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 17, Issue 7, Pages 5003-5007
Publisher
American Scientific Publishers
Online
2017-03-19
DOI
10.1166/jnn.2017.14274

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