Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 46, Issue 4, Pages 2366-2372Publisher
SPRINGER
DOI: 10.1007/s11664-017-5291-5
Keywords
Ga2O3; thin film; Sn-doped; solar-blind; photodetector
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Funding
- National Natural Science Foundation of China [51572033, 11404029, 51172208]
- Beijing Natural Science Foundation [2154055]
- Beijing University of Posts and Telecommunications (BUPT) Excellent Ph.D. Students Foundation [CX2015304]
- China Postdoctoral Science Foundation [2014M550661]
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Ga2-x Sn (x) O-3 thin films were deposited on c-plane Al2O3 (0001) substrates with different Sn content by laser molecular beam epitaxy technology (L-MBE). The Sn content x was varied from 0 to 1.0. () oriented beta-phase Ga2-x Sn (x) O-3 thin films were obtained at the substrate temperature of 850A degrees C in the vacuum pressure of 5 x 10(-5) Pa. The crystal lattice expanded and the energy band-gap decreased with the increase of Sn content for Sn4+ ions incorporated into the Ga site. The n-type conductivity was generated effectively through doping Sn4+ ions in the Ga2O3 lattice in the oxygen-poor conditions. The solar-blind (SB) photodetectors (PDs) based on Ga2-x Sn (x) O-3 (x = 0, 0.2) thin films were fabricated. The current intensity and responsivity almost increased by one order of magnitude and the relaxation time constants became shorter for x = 0.2. Our work suggests that the performance of PD can be improved by doping Sn4+ ions in Ga2O3 thin films.
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