In Situ Oxidation of GaN Layer and Its Effect on Structural Properties of Ga2O3 Films Grown by Plasma-Assisted Molecular Beam Epitaxy

Title
In Situ Oxidation of GaN Layer and Its Effect on Structural Properties of Ga2O3 Films Grown by Plasma-Assisted Molecular Beam Epitaxy
Authors
Keywords
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Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 46, Issue 6, Pages 3499-3506
Publisher
Springer Nature
Online
2017-01-19
DOI
10.1007/s11664-017-5286-2

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