Reduced dislocation density in Ga x In 1−x P compositionally graded buffer layers through engineered glide plane switch

Published 2017 View Full Article

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Title
Reduced dislocation density in Ga x In 1−x P compositionally graded buffer layers through engineered glide plane switch
Authors
Keywords
A1. High resolution x-ray diffraction, A1. Line defects, A3. Metalorganic vapor phase epitaxy, B2. Semiconducting indium gallium phosphide, B3. Solar cells
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 464, Issue -, Pages 20-27
Publisher
Elsevier BV
Online
2016-11-18
DOI
10.1016/j.jcrysgro.2016.11.050

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