4.6 Article

Acceptor evolution in Na-implanted a-plane bulk ZnO revealed by photoluminescence

Journal

JOURNAL OF APPLIED PHYSICS
Volume 122, Issue 9, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.5000240

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Funding

  1. National Natural Science Foundation of China [51372223, 91333203]
  2. Fundamental Research Funds for the Central Universities [2017FZA4007]

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Knowledge of acceptors is critical to the understanding of the p-type doping mechanism of ZnO. Here, we report the influence of annealing temperature and polarity on the acceptor formation in Na-implanted a-plane ZnO bulk crystals, which has been studied by low temperature photoluminescence spectroscopy. The formation of a Na acceptor is evidenced by the acceptor bound exciton emission around 3.35 eV, which depends strongly on the annealing temperature. Unlike the reported results in ZnO thin films, the conditions for Na acceptor formation are harsher in nonpolar ZnO than in the polar one. The acceptors gradually transform into donors when the annealing temperature is elevated or when the crystals are aged, thus calling for effective control over the stability. Published by AIP Publishing.

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