Journal
JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY
Volume 32, Issue 10, Pages 1878-1884Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7ja00081b
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [21427813]
- Program for Changjiang Scholars and the Innovative Research Team in University [IRT13036]
- Foundation for Innovative Research Groups of the National Natural Science Foundation of China [21521004]
Ask authors/readers for more resources
A depth profiling technique has been developed and employed for ultra-thin layer analysis using a newly constructed laser desorption and laser postionization time-of-flight mass spectrometer (LD-LPI-TOFMS). This technique achieves the superiority of an extremely low average ablation rate down to similar to 0.026 nm in depth per pulse for a series of Ni coated samples with varied thicknesses. Compared to high-cost SIMS apparatus, it offers an alternative strategy for nanometer thin-layer analysis. The integration of the LD-LPI source and TOFMS offers multi-element information on the constituents of each layer and substrate, as well as the trace impurities of sputtering targets. It contributes to comprehensively characterizing nanometer thin layers for the quality evaluation and process control of coatings. Additionally, an underlying capability of this method for the thickness determination of thin-layers was demonstrated. The investigations and results here indicate the potential of LD-LPI-TOFMS as a versatile tool among the available techniques in depth profiling of nanometer thin-layers, filling the gap in ultra-thin layer analysis for laser-based techniques.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available