Few-layer arsenic trichalcogenides: Emerging two-dimensional semiconductors with tunable indirect-direct band-gaps

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Title
Few-layer arsenic trichalcogenides: Emerging two-dimensional semiconductors with tunable indirect-direct band-gaps
Authors
Keywords
Indirect-direct band-gap transition, Arsenic trichalcogenides, First-principles calculations
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 699, Issue -, Pages 554-560
Publisher
Elsevier BV
Online
2016-12-30
DOI
10.1016/j.jallcom.2016.12.351

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