Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe 2 O 4 -based devices

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Title
Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe 2 O 4 -based devices
Authors
Keywords
Cu ions, Memory device, Conductive filaments, Resistive switching, ZnFe, 2, O, 4
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 694, Issue -, Pages 464-470
Publisher
Elsevier BV
Online
2016-10-09
DOI
10.1016/j.jallcom.2016.10.008

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