Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.56.04CK09
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Funding
- CREST, Japan Science and Technology Agency (JST)
- JSPS KAKENHI [JP25107003, JP25107004, JP26248061, JP15H01010, JP16H00982]
- Grants-in-Aid for Scientific Research [16H00982, 25107003, 15H01010] Funding Source: KAKEN
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We demonstrated n- and p-type carrier injections into a transition metal dichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional (2D) materials: graphite for an n-type contact and NbSe2 for a p-type contact. Instead of conventional methods such as the evaporation of metals on TMD, 2D metals were transferred onto WSe2 in order to form van der Waals contacts. With these contacts, we demonstrated a small Schottky barrier height for both carrier polarities. Our finding reveals the potential of a high-performance vdW metal/semiconductor contact for use in electronics applications. (C) 2017 The Japan Society of Applied Physics
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