Effects of post-metal annealing on the electrical characteristics of HfO x -based resistive switching memory devices

Published 2017 View Full Article

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Title
Effects of post-metal annealing on the electrical characteristics of HfO x -based resistive switching memory devices
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 6S1, Pages 06GF10
Publisher
Japan Society of Applied Physics
Online
2017-05-11
DOI
10.7567/jjap.56.06gf10

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