Filamentary model of bipolar resistive switching in capacitor-like memristive nanostructures on the basis of yttria-stabilised zirconia

A filamentary model of bipolar resistive switching has been developed for the Au/ZrO2(Y)/TiN/Ti memristive nanostructures by using kinetic Monte-Carlo approach for the migration of oxygen vacancies at the stages of electroforming, SET, and RESET processes observed experimentally in the current-voltage switching hysteresis. Statistics of the forming and switching voltages are collected and used to simulate current-voltage characteristics based on a simplified multi-filament model. It is demonstrated that both abrupt and gradual switching behaviours can be determined by the parameters of the statistical distribution of switching voltages of different conductive channels - filaments. The results can be used for the development of new-generation nonvolatile memory.