10T SRAM Using Half- $V_{\text {DD}}$ Precharge and Row-Wise Dynamically Powered Read Port for Low Switching Power and Ultralow RBL Leakage

Authors

Keywords

Journal

Volume 25, Issue 4, Pages 1193-1203

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2016-12-30

DOI

10.1109/tvlsi.2016.2637918

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