Total Dose Effects and Bias Instabilities of (NH4)2S Passivated Ge MOS Capacitors With HfxZr1–xOy Thin Films

Authors

Keywords

Journal

Volume 64, Issue 12, Pages 2913-2921

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2017-11-02

DOI

10.1109/tns.2017.2768566

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