Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2

Published 2017 View Full Article

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Title
Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 16, Issue 4, Pages 582-587
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-02-01
DOI
10.1109/tnano.2017.2661403

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