Review
Chemistry, Physical
P. Hannah Blessy, A. Shenbagavalli, T. S. Arun Samuel
Summary: This study discusses the advantages of the 3 nm TFET structure in low-power applications and the importance of overcoming the limitations of CMOS transistors.
Article
Engineering, Electrical & Electronic
Sufen Wei, Guohe Zhang, Li Geng, Zhibiao Shao, Cheng-Fu Yang
Summary: This paper presents two novel silicon-on-insulator tunnel field-effect transistors (SOI-TFETs), a lateral dual-gate TFET and a lateral triple-gate TFET, which demonstrate higher on-state current and lower off-state current due to the modulation effect of multiple gate voltages on the channel barrier. Comparison reveals that the lateral triple-gate TFET outperforms the dual-gate TFET in terms of on-state current and off-state current.
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
(2021)
Article
Engineering, Electrical & Electronic
Km Sucheta Singh, Satyendra Kumar, Kaushal Nigam
Summary: This study investigates the applicability of DMGOSDG-TFET as a biosensing element and introduces new methods for implementing a biosensor based on DMGOSDG-TFET. The research shows that DMGOSDG-TFET has potential sensitivity and performance for biosensing applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Sasmita Sahoo, Sidhartha Dash, Soumya Ranjan Routray, Guru Prasad Mishra
Summary: A new Ge/SiGe heterojunction double-gate tunnel field effect transistor (DGT) model with hetero dielectric gate and Gaussian doping drain region has been investigated, showing improved performance and suppressed band-to-band tunneling leakage current and ambipolar behavior. The analysis of different DC and RF characteristics of the proposed structure reveals better performance compared to conventional DGT, making it suitable for high-frequency applications.
Article
Engineering, Electrical & Electronic
Zhijun Lyu, Hongliang Lv, Yuming Zhang, Yimen Zhang, Yi Zhu, Jiale Sun, Miao Li, Bin Lu
Summary: A novel planar InAs/GaSb heterojunction face-tunneling FET with an implanted drain is proposed in this article for improving device performance. By reducing leakage current, the proposed FET achieves large tunneling current, steep subthreshold swing, and small leakage current simultaneously, which further promotes the development of tunnel field-effect transistors and their ultralow-power applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Multidisciplinary
Aadil Anam, S. Intekhab Amin, Dinesh Prasad, Naveen Kumar, Sunny Anand
Summary: In this paper, a charge plasma-based inverted T-shaped source-metal dual line-tunneling field-effect transistor (CP-ITSM-DLTFET) is proposed to improve the ON current (I-ON) by increasing the line-tunneling area. The proposed CP-ITSM-DLTFET outperforms almost all pre-existing dopingless TFETs in terms of DC and RF parameters. Moreover, the proposed CP-ITSM-DLTFET-based CMOS inverter shows great potential for future low power applications.
Article
Engineering, Electrical & Electronic
Jiale Sun, Yuming Zhang, Hongliang Lv, Zhijun Lyu, Bin Lu, Yi Zhu, Yuche Pan
Summary: In this paper, a ternary surface tunneling field effect transistor (TF-TFET) is designed and fabricated based on the tunneling mechanism. By adjusting the parameters and bias voltage, the transistor introduces a stable intermediate state between the switching states of conventional binary TFET devices, realizing the function of a ternary logic device. The device can convert between ternary logic and binary logic devices under certain conditions, and realize various functions. The compatibility of the fabrication process with the traditional CMOS process is of great significance for realizing the development of the ternary logic operation unit.
SOLID-STATE ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Ashish Kumar Singh, Manas Ranjan Tripathy, Kamalaksha Baral, Satyabrata Jit
Summary: This article presents a dielectric-modulated ultrasensitive label-free biosensor based on GaSb/GaAs type-II heterojunction TFET on SELBOX substrate (HJ-STFET). The proposed sensor utilizes the SELBOX substrate to enhance its performance and reduce lattice heat. The dual-cavity (DC) HJ-STFET structure with cavities in the gate oxide is used to detect biomolecules through gate-dielectric modulation.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
K. Vanlalawmpuia, Aditya Sankar Medury
Summary: In this article, the impact of ferroelectric layer thickness (tFE) on the electrical parameters of a negative capacitance dual stacked-source tunnel field-effect transistor (NCDSS-TFET) is systematically investigated using TCAD simulator. Increasing tFE leads to higher ION/IOFF current ratio and better subthreshold swing (SS) with negligible hysteresis. However, it also introduces negative differential resistance (NDR) which is undesirable for analog circuit applications. The NCDSS-TFET device is further optimized to eliminate NDR effects by engineering the drain. The analog/RF performance of the drain-engineered NCDSS-TFET is investigated and found to be improved by increasing the drain underlap length, making it suitable for high-performance and ultralow power analog applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Mohammad K. Anvarifard, Ali A. Orouji
Summary: The study successfully adjusted the energy band of a novel Si0.7Ge0.3 source TFET, improving its performance for potential application in both analog and digital applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Satyendra Kumar, Km Sucheta Singh, Kaushal Nigam, Saurabh Chaturvedi
Summary: This research introduces a new dual-material double-source T-shaped tunnel field-effect transistor (TFET) to enhance tunneling efficiency and suppress ambipolar current conduction. By utilizing two sources and gate work function engineering, the device achieves a significant improvement in current and switching ratio. Simulation results demonstrate that the investigated TFET architecture successfully eliminates ambipolar current and exhibits better performance in terms of switching ratio.
Article
Chemistry, Physical
Haiwu Xie, Yanning Chen, Hongxia Liu, Dan Guo
Summary: The study demonstrates that utilizing dual material gate and heterogeneous dielectric in vertical TFET can enhance device performance, especially excelling in terms of DC and RF metrics, with the potential to outperform traditional VTFET.
Article
Engineering, Electrical & Electronic
Wei-Chih Hou, Pao-Chuan Shih, Hao-Hsiung Lin, Barry Bing-Ruey Wu, Jiun-Yun Li
Summary: In this study, InAs/GaSb heterojunction Esaki diodes with a high peak current density of 9 MA/cm(2) were demonstrated to exhibit negative differential resistance (NDR) from 300 to 4 K. The dominant transport mechanism was shown to be band-to-band tunneling (BTBT), with the peak current increasing due to higher doping concentrations. The research also proposed a model of tunneling enhancement near the mesa sidewalls by surface defects induced during dry etching, emphasizing the importance of careful processing steps to avoid overestimation of the BTBT current.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Alireza Aghanejad Ahmadchally, Morteza Gholipour
Summary: In this simulation-based study, an n-type six-dimer-line armchair graphene nanoribbon (6-AGNR) tunnel field-effect transistor with asymmetric reservoir doping density was investigated. The results show that for the device with a 5-nm channel length and a supply voltage of 0.4 V, it exhibited a high I-ON/I-OFF ratio and a low subthreshold swing.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2021)
Article
Physics, Multidisciplinary
Jiale Sun, Yuming Zhang, Hongliang Lu, Zhijun Lyu, Yi Zhu, Yuche Pan, Bin Lu
Summary: This paper analyzes the mechanism of adjusting the tunneling current of p-TFET devices by studying the influence of ion implantation peak position on the potential of the device surface and the width of the tunneling barrier. Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated, and the test results show a significant increase in the on-state current compared to devices with the same structure. This method provides a new idea for achieving high on-state current TFET devices.
Article
Physics, Applied
Edyta N. Osika, Sacha Kocsis, Yu-Ling Hsueh, Serajum Monir, Cassandra Chua, Hubert Lam, Benoit Voisin, Michelle Y. Simmons, Sven Rogge, Rajib Rahman
Summary: This study proposes a method to couple microwave photons to atomically precise donor spin-qubit devices in silicon using the hyperfine interaction intrinsic to donor systems and an electrically induced spin-orbit coupling. The research shows that strong spin-photon coupling can be achieved in realistic device conditions without the need for an external magnetic field gradient through characterization and estimation of the 1P-1P system.
PHYSICAL REVIEW APPLIED
(2022)
Article
Physics, Multidisciplinary
Hongyang Ma, Yu-Ling Hsueh, Serajum Monir, Yue Jiang, Rajib Rahman
Summary: Quantum transport properties and electronic properties of qubit arrays and dopant qubits are important for device optimization in quantum computing. In this study, the authors compare different DFT-based methods to describe shallow donor-based qubits in silicon. By using hybrid functionals on a large lattice, they achieve remarkable agreement with experimental measurements, providing a predictive tool for designing qubits.
COMMUNICATIONS PHYSICS
(2022)
Article
Multidisciplinary Sciences
Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman, J. P. Dodson, M. A. Wolfe, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Robert Joynt, M. A. Eriksson
Summary: This study proposes a new heterostructure, the Wiggle Well, which uses concentration oscillations of Ge in the quantum well to enhance the valley splitting of quantum-dot spin qubits. The experimental results show that the presence of Ge in the quantum well does not affect the formation and manipulation of single-electron quantum dots. It is suggested that the enhancement of the valley splitting is mainly attributed to random concentration fluctuations and the presence of Ge alloy.
NATURE COMMUNICATIONS
(2022)
Article
Multidisciplinary Sciences
Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling, Lucas E. A. Stehouwer, Anne-Marije J. Zwerver, Stephan G. J. Philips, Mateusz T. Madzik, Xiao Xue, Guoji Zheng, Mario Lodari, Sergey V. Amitonov, Nodar Samkharadze, Amir Sammak, Lieven M. K. Vandersypen, Rajib Rahman, Susan N. Coppersmith, Oussama Moutanabbir, Mark Friesen, Giordano Scappucci
Summary: By using 3D atomic characterization, the authors explain the variability in valley splitting in Si/SiGe quantum dots and propose a strategy to statistically enhance the valley splitting.
NATURE COMMUNICATIONS
(2022)
Article
Quantum Science & Technology
Abhikbrata Sarkar, Joel Hochstetter, Allen Kha, Xuedong Hu, Michelle Y. Simmons, Rajib Rahman, Dimitrie Culcer
Summary: Multi-donor quantum dots play a crucial role in the development of Si-based quantum computation. Specifically, 2P:1P spin qubits with built-in dipole moment are suitable for electron dipole spin resonance (EDSR) due to the donor hyperfine interaction. The fastest EDSR time occurs when the 2P:1P axis is parallel to [111], while the best Rabi ratio occurs when it is parallel to [100]. The qubit is robust against 1/f noise if operated away from the charge anti-crossing. Entanglement via exchange is significantly faster than dipole-dipole coupling.
NPJ QUANTUM INFORMATION
(2022)
Article
Chemistry, Multidisciplinary
Matthew B. Donnelly, Mushita M. Munia, Joris G. Keizer, Yousun Chung, A. M. Saffat-Ee Huq, Edyta N. Osika, Yu-Ling Hsueh, Rajib Rahman, Michelle Y. Simmons
Summary: Controlling electron tunneling is crucial in the design and operation of semiconductor nanostructures, especially in quantum computing devices. This study successfully combines scanning tunneling microscopy lithography and tight-binding non-equilibrium Green's function (TB-NEGF) modeling to accurately describe the dependence of tunnel junction resistance on junction length, achieving satisfactory results. The use of TB-NEGF formalism in accurately modeling highly doped, atomically precise tunnel junctions in silicon is confirmed, and this model has potential for improving device performance at the nanoscale.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
Wenbo Sun, Sathwik Bharadwaj, Li-Ping Yang, Yu-Ling Hsueh, Yifan Wang, Dan Jiao, Rajib Rahman, Zubin Jacob
Summary: High-fidelity quantum gate operations are crucial for scalable quantum circuits. The presence of metallic gates and antennas in spin qubit quantum computing systems leads to detrimental effects caused by electromagnetic field fluctuations. This study focuses on the evanescent wave Johnson noise (EWJN) generated by near-field thermal and vacuum fluctuations, which induces decoherence of spin qubits and limits quantum gate operation fidelity. The authors develop a macroscopic quantum electrodynamics theory of EWJN and propose a numerical technique to quantify EWJN strength near nanofabricated metallic gates. They also study the limits of gate fidelity caused by EWJN-induced relaxation processes in two experimental quantum computing platforms and introduce a Lindbladian engineering method to optimize the control pulse sequence design and mitigate the influence of thermal and vacuum fluctuations.
PHYSICAL REVIEW APPLIED
(2023)
Article
Chemistry, Multidisciplinary
Michael T. Jones, Md Serajum Monir, Felix N. Krauth, Pascal Macha, Yu-Ling Hsueh, Angus Worrall, Joris G. Keizer, Ludwik Kranz, Samuel K. Gorman, Yousun Chung, Rajib Rahman, Michelle Y. Simmons
Summary: This study demonstrates a platform for quantum computing using phosphorus donor atoms in silicon. By adjusting the arrangement and spacing of the donor atoms, the speed and accuracy of qubit gates can be improved without affecting neighboring qubits. This approach provides a new pathway for achieving high fidelity and scalable quantum computing.
Article
Chemistry, Multidisciplinary
Radha Krishnan, Sangram Biswas, Yu-Ling Hsueh, Hongyang Ma, Rajib Rahman, Bent Weber
Summary: Researchers have observed well-defined spin states in a few-layer MoS2 crystal, confirming the correlation between spin and valley, and laying the important foundation for realizing spin-valley quantum bits.
Article
Chemistry, Physical
Yue Jiang, Shujie Zhou, Sajjad S. Mofarah, Ranming Niu, Yunlong Sun, Aditya Rawal, Hongyang Ma, Kaili Xue, Xueqing Fang, Cui Ying Toe, Wen-Fan Chen, Yi-Sheng Chen, Julie M. Cairney, Rajib Rahman, Zibin Chen, Pramod Koshy, Danyang Wang, Charles C. Sorrell
Summary: A novel nanostructure with self-generated Na0.5Bi0.5TiO3/Na0.5Bi4.5Ti4O15 (NBT/NBT4) heterojunctions has been developed through engineering the NaOH precursor concentration. This heterojunction promotes charge transfer and separation, enabling efficient seawater splitting through piezo-photocatalysis.
Article
Physics, Multidisciplinary
Yu-Ling Hsueh, Ludwik Kranz, Daniel Keith, Serajum Monir, Yousun Chung, Samuel K. Gorman, Rajib Rahman, Michelle Y. Simmons
Summary: This study finds that donor electron spin qubits hosted within nanoscale devices demonstrate long relaxation times at suitable magnetic fields for the operation of spin qubits in silicon. The relaxation rates of these qubits are mediated by spin-orbit coupling with a higher dependency on magnetic field for higher fields and a transition to lower dependency at lower magnetic fields. The deviation in low magnetic fields can be explained by a hyperfine mediated relaxation mechanism of the electron spin through a quantitative model, which identifies the importance of donor nuclear spin flips, especially in multidonor systems.
PHYSICAL REVIEW RESEARCH
(2023)
Article
Chemistry, Multidisciplinary
Ludwik Kranz, Edyta N. Osika, Serajum Monir, Yu-Ling Hsueh, Lukas Fricke, Samuel J. Hile, Yousun Chung, Joris G. Keizer, Rajib Rahman, Michelle Y. Simmons
Summary: This research explores a novel molecular regime in silicon using precision-placed atom qubits, which provides a unique means to control the electronic and spin properties of qubits with extreme accuracy. The results demonstrate that the confinement potential can be engineered at the atomic scale to optimize the properties of electron spin qubits.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Edyta N. Osika, Samuel K. Gorman, Serajum Monir, Yu-Ling Hsueh, Marcus Borscz, Helen Geng, Brandur Thorgrimsson, Michelle Y. Simmons, Rajib Rahman
Summary: Recent research has shown that high-fidelity readout of singlet-triplet qubits can be achieved in silicon-based multidonor quantum dot systems using shelving and latched readout techniques. Shelving readout requires a calibration step to account for time-varying nuclear spin polarization, while latched readout maintains non-zero readout visibility even in the presence of nuclear spin flips.
Article
Materials Science, Multidisciplinary
Archana Tankasala, Benoit Voisin, Zachary Kembrey, Joseph Salfi, Yu-Ling Hsueh, Edyta N. Osika, Sven Rogge, Rajib Rahman
Summary: This study investigates the two-electron states and exchange couplings for a phosphorous donor pair in silicon. The researchers used an atomistic full configuration interaction method to analyze donor separations and found three distinct donor separation regimes. The study also assessed the validity of simplified methods and examined the effects of donor depth on exchange couplings.
Article
Materials Science, Multidisciplinary
Alan Gardin, Ross D. Monaghan, Tyler Whittaker, Rajib Rahman, Giuseppe C. Tettamanzi
Summary: This study numerically investigates nonadiabatic transitions between the two lowest valley states of an electron in a quantum dot formed in a SiGe/Si heterostructure. By applying an electric field, the energy gap can be tuned, enabling electrical control of the probabilities of the two lowest valley states.
