Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 4, Pages 1554-1560Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2672438
Keywords
Al2O3/AIN/GaN MISFET; field-effect mobility; normally off; recessed gate; selective area growth (SAG); threshold voltage stability; uniformity
Funding
- Nature Science Foundation of China [U1601210, 61574173]
- National Key Research and Development Program of China [2016YF0400105]
- International Science and Technology Collaboration Program of Guangzhou City, China [2016201604030055]
- International Science and Technology Collaboration Program of Guangdong Province, China [2013B051000041]
- Guangdong Natural Science Foundation [2015A030312011]
- Science and Technology Plan of Guangdong Province [2015B010132007]
- Guangdong-Hong Kong Joint Innovation Project of Guangdong Province [2014B050505009]
- Science and Technology Plan of Guangzhou [201508010048]
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In this paper, a normally off Al2O3/AIN/GaN MISFET on Si substrate for achieving high threshold voltage stability and uniformity is obtained based on selective area growth. A thin AIN space layer (SL, similar to 1 nm) is adopted to GaN-based template, and the AIGaN/GaN heterostructure is selectively grown on the template to naturally form a recessed structure. By insertion of the AIN SL, the Al2O3/AIN/GaN interface trapping and scattering effects are effectively suppressed. As a result, a low threshold voltage hysteresis (Delta Vth, 80 mV at maximum gate sweep voltage of 10 V by dc I-V measurement and smaller than 200 mV in linear region by pulse I-V measurement) and a high peak field-effect mobility (mu(FE)) of 192 cm(2)/V.s are obtained in Al2O3/AIN/GaN MISFET. It is a significant improvement compared with Al2O3/GaN MISFET without AIN SL. The Al2O3/AIN/GaN MISFET also exhibits a maximum drain current (I-d,I-max) of 620 mA/mm, a low on-resistance (R-ds,R-ON) of 9.6 Omega.mm, and a high uniformity of Vth (2.5 +/- 0.1 V).
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