Article
Engineering, Electrical & Electronic
Rajib Kumar Nanda, Amitabha Nath, Laishram Robindro Singh, Mitra Barun Sarkar
Summary: The titanium dioxide (TiO2) nanowires (NW) were successfully deposited on a silicon (Si) substrate using the glancing angle deposition (GLAD) technique. A gold (Au) thin film (TF) was coated on the TiO2 NW and annealed at high temperature. The annealed Au TF/TiO2 NW based device showed enhanced electrical performance, including improved photosensitivity, rectification ratio, and low noise equivalent power, making it a reliable photodetector for commercial use.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Ngasepam Monica Devi, Stacy Anastacia Lynrah, Rajshree Rajkumari, Naorem Khelchand Singh
Summary: This study successfully synthesized silver nanoparticles decorated SiOx nanowire arrays on silicon substrates using the GLAD technique. The resulting structures showed a significant enhancement in optical absorption, defect-related emissions in the UV-vis region, and exhibited properties of a Schottky diode. The device also demonstrated low turn-on voltages, high responsivity, detectivity, EQE, and an enhanced photocurrent to dark current contrast ratio, making it a promising candidate for various applications.
SENSORS AND ACTUATORS A-PHYSICAL
(2021)
Article
Engineering, Electrical & Electronic
Atul Kumar Singh, Priyanka Chetri, Michael Cholines Pedapudi, Jay Chandra Dhar
Summary: Two different junction devices were fabricated using glancing angle deposition technique. The characteristics of the devices were confirmed by FE-SEM and TEM analysis. The I-V characteristics and rectification ratio indicated the formation of good Schottky and p-n junctions. The specific detectivity and noise equivalent power were measured, and the devices showed fast response.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2022)
Review
Chemistry, Analytical
Sarjana Yadav, Sneha Senapati, Samir Kumar, Shashank K. Gahlaut, Jitendra P. Singh
Summary: Glancing angle deposition (GLAD) is a technique for fabricating sculpted micro- and nanostructures with high sensitivity and enhanced optical and catalytic properties. GLAD-based nanostructures have broad applications in sensing, especially in the biomedical field. This review discusses the effects of morphology and deposition conditions on GLAD structures, their biosensing capability, and their use in various biosensing applications.
Article
Materials Science, Multidisciplinary
Kamal Kant Kashyap, L. Hmar Jehova Jire, P. Chinnamuthu
Summary: In this article, Au-nanoparticle adorned TiO2-nanowire devices were synthesized using glancing angle deposition technique. These devices showed a large memory window and low interface trap density, indicating their potential for capacitive memory based applications. Compared to TiO2-nanowire devices, the Au-nanoparticle adorned TiO2-nanowire devices demonstrated higher endurance and stable retention.
MATERIALS TODAY COMMUNICATIONS
(2022)
Article
Materials Science, Ceramics
Sanjib Mondal, Chiranjib Ghosh, S. M. M. Dhar Dwivedi, Anupam Ghosh, Sushama Sushama, Subhananda Chakrabarti, Aniruddha Mondal
Summary: Glancing angle deposition (GLAD) was used to synthesize plasmonic Silver nanoparticles (NPs) on chemically prepared Erbium-doped Titanium dioxide thin films (TFs). The presence of Ag NPs enhanced the optical properties of the TFs, leading to improved photo-responsivity in the UV spectral range. The plasmonic photodetector (PD) showed better performance compared to the Er:TiO2 TF-based PD, including higher photo-responsivity and improved detectivity in the UV region.
CERAMICS INTERNATIONAL
(2021)
Article
Optics
Laishram Thoibileima Chanu, Naorem Khelchand Singh
Summary: A well-aligned vertical nickel oxide nanowire was fabricated using glancing angle deposition through electron-beam evaporation at room temperature. After annealing, an increase in crystallite size, a decrease in lattice strain and dislocation density, and an increase in particle size of the nanowire were observed. Photoluminescence emission experiments showed a decrease in defect-related transitions and a broadening of emission peaks after annealing.
JOURNAL OF LUMINESCENCE
(2023)
Article
Engineering, Electrical & Electronic
Taek Joon Kim, Dayeong Kwon, Jun Young Kim, Amit Kumar Harit, Eunji Lee, Han Young Woo, Jeongyong Kim, Jinsoo Joo
Summary: In this study, organic-inorganic metal halide perovskite thin sheets were used to fabricate photodetectors. By hybridizing a π-conjugated polyelectrolyte and functionalized gold nanoparticles, the photodetector performance was significantly improved.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Laishram Thoibileima Chanu, Naorem Khelchand Singh
Summary: This study successfully presents the growth of NiO nanowire on Si substrate using the GLAD technique, and various analysis methods confirm its excellent performance characteristics, such as well-aligned growth, stable crystal structure, and larger bandgap. The fabricated device exhibits high responsivity, detectivity, and photosensitivity, along with rectifying behavior and low noise equivalent power. Furthermore, the device shows fast response time and a large linear dynamic range, making it a promising candidate for photodetector applications.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2022)
Article
Chemistry, Physical
Marcio A. Correa, Armando Ferreira, Raphael M. Tromer, Leonardo D. Machado, Matheus Gamino, Sergio A. N. Franca Junior, Felipe Bohn, Filipe Vaz
Summary: ZnO and doped ZnO films are commonly used as biosensor elements, with room-temperature ferromagnetic behavior observed in all studied samples, including pure ZnO. Computational simulations were used to investigate the origin of ferromagnetism, revealing the influence of vacancy dynamics and columnar geometry on the magnetic properties of the films. This study highlights the potential for inducing/exploring room-temperature ferromagnetism in non-ferromagnetic metal-doped semiconductors for biosensor applications.
Article
Physics, Condensed Matter
Bharathi Raj Muthu, Dhandapani Vaithiyanathan, Anuj K. Sharma
Summary: This paper presents a photodetector (PD) design based on SiO2 substrate, Au nanoparticles (NPs), and reduced graphene oxide (rGO) thin layer, which achieves plasmonic enhancement of light absorption in the visible spectral range. The simulation results show that a surrounding medium with a higher refractive index leads to greater absorption with plasmonic enhancement, resulting in higher values of quantum efficiency (eta) and responsivity (rho). The proposed PD design operates at 654.52 nm and provides eta and rho values as large as 0.527 and 0.278 A/W, respectively. Furthermore, a practical implementation of the PD design is analyzed with Au electrodes and rGO as a conducting layer. The analysis includes estimation of dark current (Idark), evaluation of detectivity (D), and detectable power (Pd). The SiO2-rGO-Au NPs structure achieves Idark, D, and Pd values of 6.33 x 10-14 A, 1.36 x 1011 Jones, and 2.28 x 10-13 W, respectively. Moreover, compared to recently-reported PD designs in the visible range, the proposed PD design provides superior performance with small Idark and large values of D and rho.
SOLID STATE COMMUNICATIONS
(2023)
Article
Materials Science, Multidisciplinary
Mengsheng Yang, Kewei Gao, Pifeng Xing, Taimin Yi, Zhibing He, Bo Ke
Summary: Gold nanoarray films prepared by glancing angle deposition exhibit different thermal stabilities and degradation mechanisms based on their structural features at different temperatures.
MATERIALS TODAY COMMUNICATIONS
(2022)
Article
Materials Science, Multidisciplinary
Sheng-Kuei Chiu, Wei-Cheng Li, Yi-Hsin Chien, Giin-Shan Chen
Summary: A simple sputtering/annealing procedure is used to fabricate WO3-loaded TiO2 films on solar panel glass. Gold nanoparticles (NPs) are loaded on the film using a self-assembled-monolayer (SAM) seeding process. The TW@Au film shows impressive self-cleaning performance under both visible light and ultraviolet light, which is attributed to the surface plasmonic resonance of the Au NPs and the matching of the TiO2/WO3 band structure.
Article
Physics, Applied
Yichi Zhang, Bo Wang, Liming Wang, Jifang Shao, Maolong Yang, Hao Sun, Ningning Zhang, Zuimin Jiang, Huiyong Hu
Summary: By utilizing special flask-shaped Au grating-Ge nanowire arrays, the performance of a Ge photodetector in the infrared optical communication band is significantly improved, with the responsivity nearly doubling. The enhancement is attributed to the excitation of surface plasmon polaritons, enhancing inter-band transition absorption and internal photoemission, leading to a dual-band photodetection capability.
APPLIED PHYSICS LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Shagolsem Romeo Meitei, Leimapokpam Sophia Devi, Naorem Khelchand Singh
Summary: This study reports the fabrication of silver nanoparticle-assisted vertically oriented beta-Ga2O3 nanowires using the glancing angle deposition technique. The optoelectronic properties of both as-deposited and annealed devices were studied, showing an improvement in crystalline quality and a reduction in defects after annealing. The presence of silver nanoparticles resulted in enhanced visible light absorption, indicating the potential of the annealed device for high-speed photodetectors.
Article
Engineering, Electrical & Electronic
Deepak Kumar Panda, Trupti Ranjan Lenka, Rajan Singh, Vishal Goyal, Nour El Islam Boukortt, Hieu Pham Trung Nguyen
Summary: In this paper, a dielectric modulated negative capacitance MoS2 FET-based biosensor is proposed for label-free detection of biomolecules. The sensing mechanism relies on the immobilization of biomolecules in a nanocavity formed below the gate, leading to variations in various electrostatic properties. An analytical model is developed and validated, and the results show that the proposed device can be used as a next-generation low-power label-free biosensor with enhanced sensitivity.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
(2023)
Article
Engineering, Electrical & Electronic
G. Purnachandra Rao, Trupti Ranjan Lenka, Rajan Singh, Nour El. I. Boukortt, Sharif Md. Sadaf, Hieu Pham Trung Nguyen
Summary: We investigated the performance of a III-nitride high electron mobility transistor (HEMT) on different substrates. A positive threshold voltage was found in HEMTs grown on beta-gallium oxide (beta-Ga2O3), while a negative threshold voltage was observed for HEMTs grown on silicon (Si), silicon carbide (SiC), and sapphire. Compared to Si, SiC, and sapphire, beta-Ga2O3 demonstrated improved parameters such as leakage characteristics, subthreshold voltage, breakdown voltage, and radio frequency performance. The research aims to provide a comprehensive understanding of a III-nitride nano-HEMT on a beta-Ga2O3 substrate, aiding future research in this advanced technology.
JOURNAL OF ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, H. P. T. Nguyen
Summary: A novel white light-emitting diode structure with enhanced thermal characteristics is designed for efficient lighting in underground mining. The use of a new nano hafnium oxide-silica doped silicone layer as LED encapsulation material improves efficiency by 30.1% and reduces efficiency droop by 0.491%. The improved power and efficiency are attributed to the reduction of electron overflow in the p-GaN region, achieved by the HfO2/SiO2 doped bi-layer. The use of nano HfO2/SiO2 as encapsulant material not only enhances light extraction, but also expands the possibilities of encapsulant engineering composites.
OPTICAL AND QUANTUM ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
G. Purnachandra Rao, Trupti Ranjan Lenka, Nour El. I. Boukort, Hieu Pham Trung Nguyen
Summary: In this work, a field plated recessed gate III-nitride HEMT on beta-Ga2O3 substrate is proposed using AlN spacer layer. The effects of different thicknesses of AlN spacer layer on the 2DEG transport characteristics, input/output, and RF characteristics of the HEMT are numerically simulated and compared. The inclusion of AlN spacer layer enhances the 2DEG concentration and improves the mobility by minimizing interface scattering. The proposed HEMT exhibits high mobility, threshold voltage, drain current, breakdown voltage, and excellent RF characteristics using a 2-nm AlN spacer layer.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
(2023)
Article
Engineering, Electrical & Electronic
Rabin Paul, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Nour El Islam Boukortt, Hieu Pham Trung Nguyen
Summary: The ultrathin-film solar cell technology utilizing chalcogenide materials like CIGS, CZTS, and CZTSe has shown promising performance. This study proposes a single-layer a-Si/CZTSe structure for the UTFSC, which exhibits an efficiency of 10.99% at optimized thicknesses. Introducing defects in the CZTSe layer reduces the cell's performance to 10.58%. The results suggest a potential for further development of UTFSC using nontoxic materials and a simple fabrication process.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Rajan Singh, G. Purnachandra Rao, Trupti Ranjan Lenka, S. V. S. Prasad, Nour El. I. Boukortt, Giovanni Crupi, Hieu Pham Trung Nguyen
Summary: In this study, the T-gate AlN/beta-Ga2O3 high electron mobility transistors (HEMTs) were analyzed using DC and RF analysis. The analysis was performed by optimizing the gate-drain distance and the dimensions of the T-gate. The results showed that by optimizing the T-gate dimensions, the HEMTs achieved higher blocking voltage, lower on-resistance, higher cut-off frequency, and higher maximum oscillation frequency, making them suitable for high-power switching and RF applications.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
(2023)
Article
Engineering, Electrical & Electronic
Samadrita Das, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Hieu Pham Trung Nguyen, Giovanni Crupi
Summary: In this paper, an electron blocking layer (EBL) free light emitting diode (LED) nanowire with prestrained layers has been proposed. The prestrained layers of InxGa1-xN/GaN are inserted between the GaN/InGaN multi-quantum wells (MQWs) and n-GaN layer to enhance the luminescence of the LED nanowires. The efficiency of the LED nanowire with prestrained layer has been improved by approximately 2.897% compared to the conventional one, due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer achieves a maximum efficiency of 85.21% with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III-nitride LED nanostructure allows for superior optical power across the output spectral range.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
(2023)
Article
Engineering, Electrical & Electronic
G. Purnachandra Rao, Trupti Ranjan Lenka, Nour El I. Boukortt, Sharif Md. Sadaf, Hieu Pham Trung Nguyen
Summary: In this study, a recessed field-plated gate AlGaN/GaN-based nano-high electron mobility transistor (HEMT) on a β-Ga2O3 substrate was designed and the impact of inserting an AlN layer between the AlGaN and GaN layers was investigated. The introduction of a thin AlN spacer layer was found to shift the two-dimensional electron gas (2DEG) away from the AlGaN/GaN interface. It was observed that the concentration of 2DEG increased with increasing thickness of the AlN layer.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Abdul Naim Khan, Aasif Mohammad Bhat, K. Jena, Trupti Ranjan Lenka, Gaurav Chatterjee
Summary: This study investigated the performance of source-gate dual field plate (SG-FP) AlGaN/GaN HEMT with different gate-to-drain drift distances. The results showed that increasing the GaN buffer thickness and gate-to-drain drift distance improved device performance and breakdown voltages. The proposed SG-FP device with SiN passivation interfacial layer, SiO2, thicker GaN buffer, and extended gate-to-source drift region showed the highest breakdown voltage and optimum frequency. The AC/DC characteristics of the optimized SG-FP were also demonstrated, showing improved breakdown voltage compared to individual source field plate (S-FP) and gate field plate (G-FP) designs.
MICROELECTRONICS RELIABILITY
(2023)
Article
Chemistry, Analytical
Samadrita Das, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Hieu Pham Trung Nguyen, Giovanni Crupi
Summary: In this study, a novel structure of AlGaN UV LED with polarization-engineered heart-shaped AlGaN quantum barriers was proposed to address the issue of electron leakage. By decreasing the downward band bending and flattening the electrostatic field, significant improvements in electroluminescence, optical output power, and efficiency were achieved. This new EBL-free AlGaN LED shows great potential in enhancing optical power and producing highly efficient UV emitters.
Proceedings Paper
Engineering, Electrical & Electronic
Samadrita Das, Trupti Ranjan Lenka, F. A. Talukdar, Ravi Teja Velpula, Hieu Pham Trung Nguyen
Summary: The grayscale composition in the barriers of multi-quantum can enhance the carrier transportation and mitigate the efficiency droop in c-plane GaN/AlGaN LEDs. The optimized LEDs with graded aluminum composition exhibit higher internal quantum efficiency and lower series resistance compared to conventional devices, resulting in improved carrier transport and reduced efficiency droop.
MICRO AND NANOELECTRONICS DEVICES, CIRCUITS AND SYSTEMS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Madhukar Saini, Trupti Ranjan Lenka
Summary: GaN HEMT is a preferred choice for high frequency applications like Power Amplifiers due to its desirable properties. Unlike other semiconductors, it can operate at high frequencies and high power ratings. The heterojunction structure of GaN HEMT provides more free electrons and blocks current flow in unwanted directions. This paper discusses the GaN HEMT transistor and its practical application as a Power Amplifier.
MICRO AND NANOELECTRONICS DEVICES, CIRCUITS AND SYSTEMS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Ashutosh Srivastava, Trupti Ranjan Lenka, Jesuraj Anthoniappen, S. K. Tripathy
Summary: In this study, the thermodynamic properties of novel quaternary chalcogenide material Ag2SrSn(S/Se)(4) in different temperature ranges were analyzed using density functional theory. The results revealed that Ag2SrSnS4 exhibited the highest melting point and hardness, while the vibrational heat capacity saturated at 199.45 Jmol(-1) K-1. Additionally, the structures of the material underwent dimensional changes with temperature.
MICRO AND NANOELECTRONICS DEVICES, CIRCUITS AND SYSTEMS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
S. Vallisree, Trupti Ranjan Lenka, J. Mrudula
Summary: In this study, a HIT-CBTSSe tandem solar cell device model was developed using Silvaco TCAD simulator, and was validated and optimized. The results showed that the unequal absorption limit the efficiency, but after optimization, the maximum attainable efficiency can reach 22.2%.
MICRO AND NANOELECTRONICS DEVICES, CIRCUITS AND SYSTEMS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Ravi Teja Velpula, Barsha Jain, Samadrita Das, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen
Summary: The article introduces a novel EBL-free AlGaN UV LED structure with polarization-controlled composition-graded convex quantum barriers. It improves the internal quantum efficiency and output power, and has the potential to generate high-power deep UV light sources for practical applications.
MICRO AND NANOELECTRONICS DEVICES, CIRCUITS AND SYSTEMS
(2023)
