Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 11, Pages 4526-4531Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2750704
Keywords
High voltage (HV); light-emitting diodes (LEDs); ultraviolet (UV)
Funding
- Ministry of Science and Technology, Taiwan [MOST 104-2221-E-009-199-MY3, MOST 105-2221-E-009-183-MY3]
- Industrial Technology Research Institute [G101W3402W, G251RA302W]
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High-efficiency high-voltage ultraviolet light-emitting diodes (HV-UVLEDs) consisting of a 4 x 4 microcells array with an area of 61 mil x 33 mil were designed and fabricated via the electrode pattern and interconnect technique. Polymer material was used to fill trench with planarization, and interconnection technology was used for metal layer connection to address wiring defect issue. In comparison with the conventional lateral UV-LED (C-UVLED), which had 33.6% and 34.7% enhancement in the light output power and wall-plug efficiency (at 1.5 W) of the HV-UVLEDs. A 56% improvement in the external quantum efficiency droop behavior was achieved for the HV-UVLEDs when compared with that of C-UVLED. This improvement can be attributed to superior current spreading in the HV-UVLED due to its smaller microcells, which increases light-emission efficiency overall.
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