Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 5, Pages 2364-2368Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2673853
Keywords
Electron emission devices; nanofabrication; nanogap arrays; nanotechnology
Funding
- National Natural Science Foundation Project [51120125001, 61571124, 61372030, 91333118]
- 111 Project [B07027]
- Graduate Innovation Program of Jiangsu [KYLX15_0100, KYLX15_0101]
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A high-quality and stable electron device of aligned gold nanogap arrays is demonstrated by using a well-controlled method with electron beam lithography and focused ion beam. Sub-30-nm nanogap arrays could be precisely fabricated with reproducibility. Field emission (FE) properties of the nanogaps are directly measured in the vacuum chamber of scanning electron microscopy with a nanomanipulator. Experimental investigation and calculations are carried out to reveal the transition process from the leakage current to the FE. Importantly, the controllable method could allow us to readily construct varying nanospacings. Besides, we also illustrate the independence of emission current on the vacuum degree over a large range, widening the applied range of the devices. These studies clearly demonstrate that electronic devices with sub-30-nm vacuum channel can be readily achieved by coupling varying nanogaps into nanostructures. It may pave the way for exploring the physics in tunneling transport devices, and therefore enable a new generation of high performance, high-speed and low-cost electronic devices.
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