Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation

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Title
Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 1, Pages 73-77
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-11-16
DOI
10.1109/ted.2016.2623774

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