Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 52, Issue 6, Pages 1618-1627Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2017.2672986
Keywords
Capacitively coupled level shifter; CMOS/GaN face-to-face bonding; gate drive for GaN; integrated voltage regulator (IVR); power electronics
Categories
Funding
- ARPA-E [DE-AR0000452]
Ask authors/readers for more resources
This paper presents a 40-MHz hybrid CMOS/GaN integrated multiphase dc-dc switched-inductor buck converter with a maximum 20-V input voltage. The half-bridge switches are realized using lateral AlGaN/GaN HEMTs, while the drivers and other circuitry are implemented in standard 180-nm CMOS. The interface between the CMOS and GaN dice is achieved through face-to-face bonding, reducing inductive parasitics for the connection to less than 15 pH. A capacitively coupled level shifter provides the gate drive for the high-side GaN switch using 5-V CMOS devices. The converter demonstrates 76% efficiency for 8: 1 V conversion and over 60% efficiency for conversion ratios up to 16: 1.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available