Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 23, Issue 4, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2017.2662661
Keywords
Semiconductor materials; terahertz materials; terahertz radiation
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Extremely high pump-to-terahertz (THz) conversion efficiencies up to 0.7% were demonstrated in recent experiments with ZnTe THz pulse sources. Such high efficiencies could be achieved by pumping at an infrared wavelength sufficiently long to suppress both two- and three-photon absorption and the associated free-carrier absorption at THz frequencies. Here, high-field high-energy THz puke generation by optical rectification in semiconductor nonlinear materials is investigated by numerical simulations. Basic design aspects of infrared-pumped semiconductor THz sources are discussed. Optimal pumping and phase-matching conditions are given. Multicycle THz pulse generation for particle acceleration is discussed.
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