4.5 Article

Precursors for p-Type Nickel Oxide: Atmospheric-Pressure Metal-Organic Chemical-Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

Journal

EUROPEAN JOURNAL OF INORGANIC CHEMISTRY
Volume -, Issue 13, Pages 1868-1876

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/ejic.201601419

Keywords

Chemical vapor deposition; Nickel; Precursors; Semiconductors; Thin films

Funding

  1. Engineering and Physical Sciences Research Council (EPSRC) [EP/F056494/1, EP/F056710/1, EP/F056648/2]
  2. Engineering and Physical Sciences Research Council [EP/F056710/1, EP/J50001X/1, EP/F056648/2, EP/F056494/1] Funding Source: researchfish
  3. EPSRC [EP/F056494/1, EP/F056710/1, EP/J50001X/1, EP/F056648/2] Funding Source: UKRI

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A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.

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