Journal
ACS ENERGY LETTERS
Volume 1, Issue 5, Pages 888-894Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.6b00423
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Funding
- German Federal Ministry of Education and Research (BMBF project MeOx-4-H2) [03SF0478A]
- Helmholtz Association's Initiative and Network Fund (HNSEI-Project)
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BiVO4 is a promising photoanode candidate for water splitting applications, but its microscopic charge carrier transport properties are not yet fully understood. We investigated the photoinduced carrier mobility for undoped and 1% tungsten-doped BiVO4 thin films in an early time window from 1 ps to 1 ns using THz spectroscopy. The combined electron hole effective mobility gradually decreases with time by 1 order of magnitude starting at an upper limit of similar to 0.4 cm(2) V-1 s(-1). The loss is attributed to carrier localization. We provide for the first time direct time-resolved evidence of hole polaron formation accompanied by the temporal buildup of a polaron population in parallel to initial carrier trapping. A mobility of 0.02 cm(2) V-1 s(-1) is found for the self trapped carriers, which leads to a thermal hopping activation energy of similar to 90 meV.
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