4.7 Article

Ferroelectric photovoltaic response to structural transformations in doped BiFeO3 derivative thin films

Journal

MATERIALS & DESIGN
Volume 105, Issue -, Pages 296-300

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.matdes.2016.05.042

Keywords

Ferroelectric photovoltaics; Codoping; Oriented-grain growth; Bandgap modulation

Funding

  1. Department of Science and Technology, Government of India, Grant [DST/TSG/ME/2013/58]
  2. University of Delhi, DU R n D Project [RC/2015/9677]

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We report an investigation on crystallographic texturing, optical bandgap modulation and ferroelectric photovoltaic (FE-PV) response of semitransparent Au/BiFeO3 derivatives/Sn: In2O3 (ITO) thin film capacitors. Optimized A/B-site doping of respective Ce3+ and Mn2+ drives large-amplitude structural changes in BiFeO3 (BFO) filmswith partial tetragonal transformation and upsurge in extent of texture of (110) preferred orientation. Spin coated BFO, doped BiFe0.9Mn0.1O3, Bi0.88Ce0.12FeO3 and codoped Bi(0.88)Ce(0.12)Fe(0.9M)n(0.1)O(3) films of 350 nm thickness on ITO coated corning glass exhibited optical transmittance of 65-80% in visible light range and revealed blue shift in optical band gap from 2.53 to 2.81 eV due to splitting of t(2g) and e(g) orbital. Influence of single and co-doping on FE-PV response demonstrated crystallographic orientation and depolarizing field dependent behavior of short circuit current (J(SC)) and open circuit voltage (V-OC). Current-voltage (J-V) characteristics of semitransparent Au/Bi0.88Ce0.12Fe0.9Mn0.1O3/ITO capacitors possessed large J(ON)/J(OFF) ratio of approx. 10(4) at zero bias. Temporal dependence of photocurrent showed highly repeatable and stable response for consecutive ON/OFF cycles of illumination under solid state violet laser (405 nm) of 160 mW/cm(2) intensity, a forward step towards non-destructive memory combining electronic and optical functionalities. (C) 2016 Elsevier Ltd. All rights reserved.

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