Journal
OPTICA
Volume 3, Issue 7, Pages 741-747Publisher
OPTICAL SOC AMER
DOI: 10.1364/OPTICA.3.000741
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Funding
- European Commission (NAVOLCHI)
- European Research Council (ERC) EnTeraPIC [280145]
- Helmholtz International Research School of Teratronics (HIRST)
- Alfried Krupp von Bohlen und Halbach-Stiftung
- Karlsruhe Nano Micro Facility (KNMF), a Helmholtz Research Infrastructure at Karlsruhe Institute of Technology (KIT)
- European Research Council (ERC) [280145] Funding Source: European Research Council (ERC)
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Silicon-plasmonics enables the fabrication of active photonic circuits in CMOS technology with unprecedented operation speed and integration density. Regarding applications in chip-level optical interconnects, fast and efficient plasmonic photodetectors with ultrasmall footprints are of special interest. A particularly promising approach to silicon-plasmonic photodetection is based on internal photoemission (IPE), which exploits intrinsic absorption in plasmonic waveguides at the metal-dielectric interface. However, while IPE plasmonic photodetectors have already been demonstrated, their performance is still far below that of conventional high-speed photodiodes. In this paper, we demonstrate a novel class of IPE devices with performance parameters comparable to those of state-of-the-art photodiodes while maintaining footprints below 1 mu m(2). The structures are based on asymmetric metal-semiconductor-metal waveguides with a width of less than 75 nm. We measure record-high sensitivities of up to 0.12 A/W at a wavelength of 1550 nm. The detectors exhibit opto-electronic bandwidths of at least 40 GHz. We demonstrate reception of on-off keying data at rates of 40 Gbit/s. (C) 2016 Optical Society of America
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