Journal
MATERIALS SCIENCE-POLAND
Volume 34, Issue 4, Pages 868-871Publisher
DE GRUYTER OPEN LTD
DOI: 10.1515/msp-2016-0111
Keywords
silicon oxynitride; RF PECVD; spectroscopic ellipsometry; reflection coefficient
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Funding
- European Union within European Regional Development Fund [POIG.01.01.02-00-008/0805]
- National Centre for Research and Development through Applied Research Program [178782, ITE/PBS2/A3/15/2013/PWr]
- Wroclaw University of Science and Technology
- Slovak-Polish International Cooperation Program [SK-PL-0005-12]
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In this study, the authors deposited silicon oxynitride films by Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF PECVD) method. The research explores the relationship between the deposition process parameters and the optical properties of the deposited SiOxNy films. The optical constants of SiOxNy films were measured and calculated by spectroscopic ellipsometry method. Additionally, the authors investigated the possibility of controlling the deposited film composition by the flow ratio of different gaseous precursors: ammonia (NH3), diluted silane (2% SiH4/98% N-2), nitrous oxide (N2O) and nitrogen (N-2). The gas mixture introduced to the working chamber during the growth of the film has the influence on the Si-O and Si-N bonds formation and the ratio between these bonds determines the refractive index of the deposited film.
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