Journal
ADVANCED MATERIALS INTERFACES
Volume 3, Issue 16, Pages -Publisher
WILEY
DOI: 10.1002/admi.201600086
Keywords
DFT calculations; magnetoelectricity; memristive switching; oxide interface; transition metal
Funding
- National Science Foundation [DMR-1207241]
- Department of Energy [DE-FG02-09ER46554]
- McMinn Endowment at Vanderbilt University
- NSF XSEDE [TG-DMR130121]
- Spanish MICINN [MAT2014-52405-C02-01]
- Consolider Ingenio [2010CSD2009-00013]
- CAM through grant CAM [S2013/MIT-2740]
- EPSRC
- Division of Scientific User Facilities of the Office of Basic Energy Sciences, US Department of Energy
- U.S. Department of Energy, Office of Science, Materials Science and Engineering Division
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
- U.S. Department of Energy [DE-AC02-05CH11231]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1207241] Funding Source: National Science Foundation
Ask authors/readers for more resources
Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This study reports memristive switching in La0.7Ca0.3MnO3/PrBa2Cu3O7 bilayers with an on/off ratio greater than 10(3) and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the result of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic dead layer, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a bit. The results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available