Article
Chemistry, Multidisciplinary
Liefeng Feng, Kaijin Liu, Miaoyu Wang
Summary: The application of layered black phosphorus materials is guided by the precise relationship between material thickness and material properties. Black phosphorus, as a two-dimensional semiconductor material with excellent optoelectronic properties, has attracted widespread attention. The output characteristics and transfer characteristics of BP-FETs with different BP thicknesses were analyzed in detail, and it was found that the source-drain current (I-ds) of devices is directly related to the BP thickness.
APPLIED SCIENCES-BASEL
(2023)
Article
Chemistry, Analytical
Qikun Xu, Boyang Zong, Yuehong Yang, Qiuju Li, Shun Mao
Summary: This study reports a black phosphorus quantum dots modified Ti3C2Tx nanosheet, which shows excellent NO2 detection performance as the sensing channel in a gas sensor. The study also investigates the effects of humidity and temperature on the sensor performance and proposes an efficient calibration strategy to eliminate the humidity effect. The results demonstrate enhanced sensitivity and selectivity of the black phosphorus quantum dots modified Ti3C2Tx nanosheet.
SENSORS AND ACTUATORS B-CHEMICAL
(2022)
Article
Nanoscience & Nanotechnology
Jianguo Dong, Zhe Sheng, Rui Yu, Wennan Hu, Yue Wang, Haoran Sun, David Wei Zhang, Peng Zhou, Zengxing Zhang
Summary: The study demonstrates that using indium and ferroelectric hafnium zirconium oxide as materials can achieve WSe2 N-type negative capacitance field-effect transistors with significantly low subthreshold slope, potentially prolonging device miniaturization, achieving high gate control ability, and providing a new solution for low-power high-density electronic devices.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Xiaoyan Chen, Qiuju Li, Taoyue Yuan, Mengtao Ma, Ziwei Ye, Xiaojie Wei, Xian Fang, Shun Mao
Summary: A water-stable BP FET sensor for antibiotic detection is developed by employing a surface engineering strategy with Ag+ coordination and MC supramolecular passivation. The BPAg(+)/MC/MIPs sensor shows high sensitivity, low detection limit, and rapid response to tetracycline, as well as high selectivity against other antibiotics. A new sensing mechanism based on the probe structure and the electrostatic gating effect is proposed. This work enables the application of 2D BP for antibiotic detection in aqueous medium and reveals a new sensing mechanism in chemical analysis by FET sensors.
Article
Chemistry, Analytical
Jong Hyeok Oh, Yun Seop Yu
Summary: This study investigated the tunneling effect in a N-type feedback field-effect transistor (NFBFET). The NFBFET has a highly doped N-P junction in the channel region, and when a drain-source voltage is applied, band-to-band tunneling (BTBT) current can be formed on the surface region of the N-P junction. The alignment between the conduction band of the N-region and the valence band of the P-region occurs, resulting in an increase in off-currents. However, as a gate-source voltage is applied, the tunneling rate decreases due to a reduction in the aligned region between bands caused by a stronger gate-field. The tunneling currents eventually vanish before reaching the threshold voltage at the BTBT vanishing point. Increasing the doping concentration in the gated-channel region results in the generation of tunneling current not only on the surface region but also in the bulk region, leading to shorter tunneling lengths and increased leakage currents. The BTBT vanishing point also increases as the tunneling rates at the surface and bulk regions increase.
Article
Chemistry, Physical
Qin Lu, Xiaoyang Li, Haifeng Chen, Yifan Jia, Tengfei Liu, Xiangtai Liu, Shaoqing Wang, Jiao Fu, Daming Chen, Jincheng Zhang, Yue Hao
Summary: This article demonstrates a mild method for thinning black phosphorus (BP) flakes. Slight ultraviolet-ozone (UVO) radiation followed by an argon plasma treatment is used to oxidize mechanically exfoliated BP flakes and remove previous ozone treatment residues. By controlling the thickness of BP flakes, low damage and efficient electronic devices are fabricated.
Article
Chemistry, Multidisciplinary
Ze-Fan Yao, Hao-Tian Wu, Fang-Dong Zhuang, Peng-Fei Zhang, Qi-Yi Li, Jie-Yu Wang, Jian Pei
Summary: Ideal and environmentally stable charge transport is demonstrated in n-type polymer field-effect transistors using an organic-inorganic hybrid double-layer dielectric. The fabricated polymer transistors exhibit high electron mobility and ideal reliability factors, showing robust performance to organic solvent and maintaining high performance after long-term storage.
Article
Engineering, Electrical & Electronic
Sewon Park, Jisang Ha, Muhammad Farooq Khan, Chaekwang Im, Jae Young Park, Sang Hyuk Yoo, Malik Abdul Rehman, Keonwook Kang, Soo Hyun Lee, Seong Chan Jun
Summary: In this study, a homojunction device fabricated using ReS2 flakes was reported, and its p-n diode characteristics were observed. The contact resistance and intrinsic mobility of ReS2 field-effect transistors with different thicknesses were evaluated, showing a decrease in contact resistance and an increase in intrinsic mobility with increasing thickness. The rectifying behavior of a vertical ReS2 (thin)-ReS2 (thick) homostructure was measured, and the broadband near-infrared response of a single-flake homostructure of ReS2 was observed. The findings of this study are of importance for the advancement of electronic devices.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Analytical
Jong Hyeok Oh, Yun Seop Yu
Summary: This study introduces an improved macro-model for an N-type feedback field-effect transistor (NFBFET) and verifies its effectiveness through comparison with a previous model and circuit simulation. The new model consists of two parts, a charge integrator circuit and a current generator circuit, addressing previous issues in accurately implementing certain characteristics.
Article
Nanoscience & Nanotechnology
Zhuoqiong Zhang, Yabing Tang, Yunfan Wang, Zixin Zeng, Run Shi, Han Yan, Sai-Wing Tsang, Chun Cheng, Shu Kong So
Summary: The thermal transport efficiency of organic semiconductors is lower compared to crystalline inorganic semiconductors. This study demonstrates that blending with an insulator, such as polystyrene, can enhance the heat conduction of organic semiconductors. The improved heat transfer is attributed to better intimate mixing and bridging between the host material and the insulator.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Kendahl L. Walz Mitra, Christine H. Chang, Michael P. Hanrahan, Jiaying Yang, Daniel Tofan, William M. Holden, Niranjan Govind, Gerald T. Seidler, Aaron J. Rossini, Alexandra Velian
Summary: Surface functionalization of few-layer black phosphorus nanosheets using photolytically generated nitrenes was introduced in this study. A variety of characterization techniques were employed to investigate the chemical structure of the modified nanosheets, conclusively identifying the presence of iminophosphorane units on the nanosheet surface.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2021)
Article
Nanoscience & Nanotechnology
Yiru Wang, Limin Kang, Zhenliang Liu, Zuteng Wan, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu
Summary: By intercalating an n-type semiconductor layer in a pentacene OFET structure, the hole barrier caused by the defect layer can be adjusted, resulting in lower P/E gate voltages, higher field-effect mobility, faster P/E speeds, and longer retention time.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Abdelkader Abderrahmane, Changlim Woo, Pil-Ju Ko
Summary: In this study, a novel heterojunction field-effect transistor (HJFET) using two-dimensional graphene, molybdenum diselenide, and black phosphorus was fabricated with the protection of hexagonal boron nitride to prevent device degradation. The electrical and optoelectronic characteristics of the graphene/n-MoSe2 and graphene/n-MoSe2/p-BP heterojunctions were measured. The n-MoSe2/p-BP heterojunction exhibited a potential barrier at the interface, allowing the use of BP as a top-gate contact to adjust the electrical and optoelectronic performances of the graphene/n-MoSe2 heterojunctions. The graphene/n-MoSe2 junction field-effect transistor with p-BP as gate contact demonstrated the best optoelectronic performance, making it extremely promising for photodetection applications.
Article
Materials Science, Multidisciplinary
Alessandro Grillo, Aniello Pelella, Enver Faella, Filippo Giubileo, Stephan Sleziona, Osamah Kharsah, Marika Schleberger, Antonio Di Bartolomeo
Summary: We investigate the fabrication and electrical properties of back-gated field effect transistors with a black phosphorus (BP) channel. We find that the hysteresis caused by intrinsic defects can be utilized for non-volatile memories. The use of a protective poly(methyl methacrylate) layer on top of the BP channel does not affect the electrical properties and prevents degradation caused by air exposure.
Article
Materials Science, Multidisciplinary
Himani Arora, Zahra Fekri, Yagnika Nandlal Vekariya, Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Manfred Helm, Artur Erbe
Summary: In this study, a fully-encapsulated BP-based field-effect transistor (FET) scheme is employed using a lithography-free via-encapsulation method. The electrical properties of the via-encapsulated BP FETs are found to be significantly improved compared to unencapsulated devices. The results demonstrate that the via-contacting scheme leads to superior performance in terms of higher mobility, lower hysteresis, and long-term ambient stability in BP FETs.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Nanoscience & Nanotechnology
Naga Anirudh Peyyety, Sandeep Kumar, Min-Ken Li, Simone Dehm, Ralph Krupke
Summary: In this study, photodetectors were fabricated from nanocrystalline graphene or graphite (NCG) with tailored layer thicknesses, achieving spectrally flat characteristics in the near-infrared to shortwavelength infrared region. The photodetectors exhibited homogeneous and unipolar biased photoresponse, with positive and negative photocurrents at the electrodes during short-circuit photoresponse.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Multidisciplinary
I. C. Lin, M. H. Lee, P. C. Wu, S. C. Lin, J. W. Chen, C-C Li, G. Y. Guo, Y-H Chu, R. Sankar, M-W Chu
Summary: Thin oxide films offer vast opportunities for modern electronics, and this study demonstrates the twisting of metallic phases into distinct charge-lattice entangled states by epitaxial strains. The research reveals lattice instabilities and localized hole doping in LaNiO3, PrNiO3, and NdNiO3 films on SrTiO3. These findings indicate the existence of hidden orders in versatile oxide heterostructures with unexpected properties.
NEW JOURNAL OF PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Yi-Ying Lu, Yan-Ting Huang, Jia-Ni Chen, Jie Jhou, Liang-Wei Lan, Chien-Cheng Kuo, Jui-Hung Hsu, Shang-Hsien Hsieh, Chia-Hao Chen, Raman Sankar
Summary: The energy barrier formed at the interface between a 2D material and a bulk metal is critical for the performance of nanoelectronic devices. The commonly used Schottky-Mott rule fails to predict the correct band alignment due to surface states or a strong coupling. Using X-ray photoemission spectroscopy and temperature-dependent transport measurements, the valence band offset and energy barrier at the indium/indium selenide interface were determined. The study found that indium selenide can be tuned from metallic to insulating by conventional SiO2 dielectric gate tuning.
ACS APPLIED NANO MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Arif I. Inamdar, Batjargal Sainbileg, Chi-Jia Lin, Muhammad Usman, Saqib Kamal, Kuan-Ru Chiou, Abhishek Pathak, Tzuoo-Tsair Luo, Khasim Saheb Bayikadi, Raman Sankar, Jenq-Wei Chen, Tien-Wen Tseng, Ruei-San Chen, Michitoshi Hayashi, Ming-Hsi Chiang, Kuang-Lieh Lu
Summary: The report presents a one-dimensional metal-organic nanotube semiconducting material with excellent photocurrent responses. The material exhibits a unique nanotube structure that shows semiconducting properties and high conductivity. Theoretical calculations indicate that the structural features of this material facilitate effective charge transport and eliminate fast charge recombination. These findings are not only of chemical and fundamental importance, but also have great potential for applications in nano-optoelectronics.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Chih-Yi Cheng, Wei-Liang Pai, Yi-Hsun Chen, Naomi Tabudlong Paylaga, Pin-Yun Wu, Chun-Wei Chen, Chi-Te Liang, Fang-Cheng Chou, Raman Sankar, Michael S. Fuhrer, Shao-Yu Chen, Wei-Hua Wang
Summary: This study investigates the intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors through displacement current measurements. The research uncovers a strong self-gating effect and reveals the IL-phase-dependent transport characteristics. Raman spectroscopy confirms the dominance of self-gating caused by the correlation between the intra- and intersystem Coulomb interactions. This study is significant for understanding the capacitive coupling at the InSe/IL interface.
Article
Chemistry, Multidisciplinary
Cheng-Chieh Lin, Jia-Ying Li, Nian-Zu She, Shao-Ku Huang, Chih-Ying Huang, I-Ta Wang, Fu-Li Tsai, Chuan-Yu Wei, Ting-Yi Lee, Di-Yan Wang, Cheng-Yen Wen, Shao-Sian Li, Atsushi Yabushita, Chih-Wei Luo, Chia-Chun Chen, Chun-Wei Chen
Summary: In this study, stable phase-pure high-membered 2D inorganic Ruddlesden-Popper perovskite (IRPP) nanosheets were successfully synthesized, exhibiting a strong quantum confinement effect with tunable absorption and emission. These materials show superior structural and optical stability, making them a promising candidate as photocatalysts in CO2 reduction reactions.
Article
Chemistry, Multidisciplinary
Swathi M. Gowdru, Jou-Chun Lin, Szu-Tan Wang, Yi-Chia Chen, Kuan-Chang Wu, Cheng-Nan Jiang, Yu-Dian Chen, Shao-Sian Li, Yuan Jay Chang, Di-Yan Wang
Summary: Lewis base urea was used as an effective additive to facilitate the formation of 2D RP perovskite thin films with larger grain size and high crystallinity.
Article
Chemistry, Multidisciplinary
Min-Ken Li, Adnan Riaz, Martina Wederhake, Karin Fink, Avishek Saha, Simone Dehm, Xiaowei He, Friedrich Schoeppler, Manfred M. Kappes, Han Htoon, Valentin N. Popov, Stephen K. Doom, Tobias Hertel, Frank Hennrich, Ralph Krupke
Summary: This work demonstrates that electroluminescence excitation is selective towards neutral defect-state configurations with the lowest transition energy, which, combined with gate control, leads to high spectral purity.
Article
Nanoscience & Nanotechnology
Yi-Ying Lu, Hsiao-Ching Yu, You-Xin Wang, Chih-Keng Hung, You-Ren Chen, Jie Jhou, Peter Tsung-Wen Yen, Jui-Hung Hsu, Raman Sankar
Summary: This study demonstrates a red, green, and blue (RGB) color contrast method for identifying the thickness of Indium selenide (InSe). By analyzing the optical contrasts from the RGB channels, the thickness of InSe can be quantitatively correlated. The effective refractive indices are extracted and the wavelength-dependent refractive indices are considered to improve the accuracy of thickness estimation. In addition, the complex refractive index spectra generated from ab initio numerical calculation results are used for thickness identification. This work has significant implications for the study and practical applications of layered materials.
Article
Chemistry, Multidisciplinary
Jingtao Li, Yang Ma, Yufo Li, Shao-Sian Li, Boxing An, Jingjie Li, Jiangong Cheng, Wei Gong, Yongzhe Zhang
Summary: The ultrathin feature of two-dimensional transition metal dichalcogenides (TMDs) brings special performance in electronic and optoelectronic fields. The synthesis of lateral heterojunctions with clean and sharp interfaces is still a challenge. In this study, a simple chemical vapor deposition (CVD) method is proposed to effectively separate the growth process of different TMDs, resulting in good regulation of the composition change at the junction region. The obtained MoS2-WS2 lateral heterojunctions exhibit better photoelectric performance than those with graded junctions.
Article
Chemistry, Analytical
Shu-Cheng Lo, Shao-Sian Li, Wen-Fai Yang, Kuang-Chong Wu, Pei-Kuen Wei, Horn-Jiunn Sheen, Yu-Jui Fan
Summary: This paper presents a new micro/nanostructure co-hot embossing technique for the integration of gold-capped nanostructures as localized surface plasmon resonance (SPR) sensors into a microfluidic channel. The advantage of this technique is that it eliminates the need for alignment between the SPR sensors and the microfluidic channel during bonding. The integrated SPR sensor and microfluidic channel were characterized, and the sensitivity of the SPR sensor to refractive index was determined using different concentrations of glycerol solutions. The SPR sensor was also used for quantifying latent membrane protein (LMP-1) by modifying anti-LMP-1 on its surface, and a calibration curve was created using different concentrations of LMP-1 samples.
Article
Chemistry, Multidisciplinary
Ro-Ya Liu, Angus Huang, Raman Sankar, Joseph Andrew Hlevyack, Chih-Chuan Su, Shih-Chang Weng, Meng-Kai Lin, Peng Chen, Cheng-Maw Cheng, Jonathan D. Denlinger, Sung-Kwan Mo, Alexei V. Fedorov, Chia-Seng Chang, Horng-Tay Jeng, Tien-Ming Chuang, Tai-Chang Chiang
Summary: This study presents spectroscopic signatures of a predicted topological hourglass semimetal phase in Nb3SiTe6 through angle-resolved photoemission. The results show the existence of linear band crossings and nodal loops, originating from nontrivial Berry phase and predicted glide quantum spin Hall effect. The observation of saddle-like Fermi surface and in situ alkali-metal doping also reveal other band crossings and correlated parabolic bands with accidental nodal loop states.
Article
Materials Science, Multidisciplinary
Redhwan Moqbel, Yih-Ren Chang, Zi-Yi Li, Sheng-Hsun Kung, Hao-Yu Cheng, Chi-Cheng Lee, Kosuke Nagashio, Kung-Hsuan Lin
Summary: In this work, the layered structure and ferroelectric properties of SnS were investigated experimentally and theoretically. Polarization-resolved second harmonic generation microscopy was used to study SnS few layers on mica substrates, and significant variations in SHG polar patterns were observed in the range of 800 nm to 1000 nm. Theoretical calculations were consistent with experimental results. This work is important for understanding the ferroelectric properties of SnS and the transition of different ferroic phases.
Article
Multidisciplinary Sciences
Anna P. P. Ovvyan, Min-Ken Li, Helge Gehring, Fabian Beutel, Sandeep Kumar, Frank Hennrich, Li Wei, Yuan Chen, Felix Pyatkov, Ralph Krupke, Wolfram H. P. Pernice
Summary: In order to achieve chip-level integration of controllable nanoscale light sources, the authors demonstrate a novel approach of heterogeneously integrating electroluminescent carbon nanotubes with photonic circuits. By back-gating the nanotubes, electrical control of the emission is achieved with high on-off ratio and strong enhancement in the telecommunication band. The use of nanographene as a low-loss material enables efficient coupling without compromising optical quality. This study provides a versatile method for integrated photonic circuits.
NATURE COMMUNICATIONS
(2023)
