Journal
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
Volume 6, Issue 5, Pages 716-723Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TTHZ.2016.2592180
Keywords
Circuit modeling; detector; millimeter wave devices; negative differential resistance (NDR); oscillator; resonant tunneling devices; resonant tunneling diodes (RTDs); semiconductor device modeling; terahertz (THz); tunneling
Funding
- Core Research for Evolutional Science and Technology (CREST) program of the Japan Science and Technology Agency (JST)
- Grants-in-Aid for Scientific Research [16H04350] Funding Source: KAKEN
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Circuit models of transmission line elements and of a terahertz resonant tunneling diode (RTD) have been developed. The models allow for a reliable design of RTD-based oscillator and detector circuits. The transmission line elements have been modeled based on electromagnetic field simulations and dc measurements. Their accuracy has been verified through S-parameter measurements. The RTD has been modeled on the basis of dc and S-parameter measurements. The models have been used for the circuit design. A new circuit has been developed that can provide a load impedance that allows for high-output-power oscillators and high-sensitivity detectors. The circuit has been manufactured and measured as an oscillator and as a detector at frequencies around 300 GHz. An excellent agreement between measurement and simulation has been obtained, proving the accuracy of the developed models.
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