Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 6, Issue 3, Pages 604-610Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2016.2528404
Keywords
Amorphous-to-nanocrystalline transition phase; hydrogen-plasma treatment; oxygen incorporation; stretching modes; surface passivation
Funding
- National Natural Science Foundation of China [61204005]
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Two effective interface optimizations, i.e., hydrogenplasma treatment (HPT) and oxygen incorporation (OIn), have been investigated to optimize the interface structure and promote the formation of hydrogenated amorphous silicon (a-Si: H) with an amorphous-to-nanocrystalline transition phase based on the surface passivation of crystalline silicon. Both multistep HPT and intentional OIn are capable of producing a compact interface and a transition phase in the case of initial a-Si: H films deposited under different conditions. An appropriate multistep HPT is responsible for modifying the a-Si: H into a transition phase, whereas an effective OIn forms a disordered and more compact interface, as well as a crystallite-isolated and more transparent structure.
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