Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes

(2013) Wael Z. Tawfik et al.   APPLIED SURFACE SCIENCE

Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures

(2013) Wei-Liang Chen et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

(2012) Michael J. Cich et al.   APPLIED PHYSICS LETTERS

The Formation and the Plane Indices of Etched Facets of Wet Etching Patterned Sapphire Substrate

(2012) Yu-Chung Chen et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer

(2011) Cheng-Hsiung Yen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Spatial correlation between optical properties and defect formation in GaN thin films laterally overgrown on cone-shaped patterned sapphire substrates

(2010) Kyu-Seung Lee et al.   JOURNAL OF APPLIED PHYSICS

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes

(2010) Jun Ho Son et al.   OPTICS EXPRESS

High quality ultraviolet AlGaN∕GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers

(2008) Zhen-Yu Li et al.   APPLIED PHYSICS LETTERS

Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited masks

(2008) J. Hertkorn et al.   JOURNAL OF CRYSTAL GROWTH