Journal
AIP ADVANCES
Volume 6, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4942477
Keywords
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Funding
- National 973 project from National Basic Research Program of China [2014CB931700, 2014CB931702]
- National Natural Science Foundation of China [61222403, 21403112, 51402152]
- China Postdoctoral Science Foundation [2014M551595]
- Natural Science Foundation of Jiangsu Province [BK20140778]
- Scientific Foundation of Jinling Institute of Technology [jit-n-201533]
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We carry out a comparative study on resistive switching in CuO/ZnO bilayer films; both samples grown Pt and Ag electrodes show bipolar switching behaviors. The two kinds of current-voltage curves reveal the different resistive switching behaviors in Pt/CuO/ZnO/Pt and Ag/CuO/ZnO/Pt, respectively. We conjecture that the formation and rupture of conducting filaments are responsible for the switching effect. Filaments induced by migration of oxygen ions are responsible for resistive switching with the Pt electrode. In contrast, resistive switching with the Ag electrode is attributed to the migration of metal cations and the corresponding electrochemical metallization. It is also inferred that the characteristic nature of the conducting filaments influences many aspects of switching characteristics, including the switching voltages and cycling variations at room temperature. (C) 2016 Author(s).
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