Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors
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Title
Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors
Authors
Keywords
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Journal
Materials
Volume 9, Issue 1, Pages 46
Publisher
MDPI AG
Online
2016-01-14
DOI
10.3390/ma9010046
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- (2012) Yoshihide Fujisaki et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Self-assembled monolayer modification of silver source–drain electrodes for high-performance pentacene organic field-effect transistors
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- Molecular doping effect in bottom-gate, bottom-contact pentacene thin-film transistors
- (2011) Yusuke Wakatsuki et al. JOURNAL OF APPLIED PHYSICS
- Performance improvement mechanisms of organic thin-film transistors using MoOx-doped pentacene as channel layer
- (2011) Ching-Ting Lee et al. ORGANIC ELECTRONICS
- Engineered interface using a hydroxyl group-free polymeric buffer layer onto a TiO2 nanocomposite film for improving the electrical properties in a low-voltage operated organic transistor
- (2011) Jin-Hyuk Bae et al. SURFACE AND INTERFACE ANALYSIS
- Performance improvement of bottom-contact pentacene-based organic thin-film transistors by inserting a thin polytetrafluoroethylene buffer layer
- (2010) Ching-Lin Fan et al. APPLIED PHYSICS LETTERS
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- (2009) Jun Li et al. SOLID STATE COMMUNICATIONS
- Erratum: Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses [Phys. Rev. B77, 195212 (2008)]
- (2008) Kentaro Harada et al. PHYSICAL REVIEW B
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