Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs

Title
Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs
Authors
Keywords
CNTFETs, CNTFET performance, Gate dielectric materials, Self-consistent Poisson–Schrödinger, Nanoelectronic device modeling
Journal
Journal of Computational Electronics
Volume 15, Issue 4, Pages 1308-1315
Publisher
Springer Nature
Online
2016-10-05
DOI
10.1007/s10825-016-0901-7

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