Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
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Title
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
Authors
Keywords
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Journal
Nature Communications
Volume 7, Issue -, Pages 10632
Publisher
Springer Nature
Online
2016-02-04
DOI
10.1038/ncomms10632
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