Journal
ULTRAMICROSCOPY
Volume 160, Issue -, Pages 80-83Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.ultramic.2015.10.006
Keywords
VEELS; Low-loss EELS; Cerenkov limit; GaAs; Band gap measurements
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The generation of Cerenkov photons, contributions from retardation and surface effects, and the excitation of guided light modes can complicate the analysis of valence electron energy-loss spectroscopy (VEELS) data. In recent works it was argued that working below the so-called Cerenkov limit unwanted spectral contributions can be avoided, simplifying the reliable measurement of band gap energies and the extraction of the dielectric function by the Kramers-Kronig analysis. Here, relativistic simulations of valence electron energy-loss spectra of GaAs are employed in order to identify different spectral contributions. It is found that for electron energies below the Cerenkov limit the spectra can still be affected by the excitation of guided light modes and retardation effects. These spectral contributions can influence the position of the apparent band gap signal and can be problematic for the Kramers-Kronig analysis when working below or above the Cerenkov limit. (C) 2015 Elsevier B.V. All rights reserved.
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