Journal
THIN SOLID FILMS
Volume 599, Issue -, Pages 54-58Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2015.12.062
Keywords
Silicon; Photoanode; Aluminum trioxide; Interlayer; Nickel oxide; Catalyst; Oxygen evolution reaction; Photoelectrochemical cell
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Funding
- Human Resources Development program of the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning(KETEP) grant - Korea government Ministry of Trade, Industry and Energy [20154030200680]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20154030200680] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [22A20130012456] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We employ a thin Al2O3 interlayer between p-NiOX catalyst/n-Si photoanode interfaces to realize an effective oxygen evolution reaction (OER). The Al2O3 interlayer is used to reduce the interface defect density, enhance the band bending by suppressing the Fermi-level pinning effect, and enhance photovoltage at the catalyst/ semiconductor rectifying junction. Our NiOX/Al2O3/n-Si photoanodes generated a photocurrent of 3.36 mA/cm(2) at the equilibrium potential of OER (E-OER = 1.23 V vs. reversible hydrogen electrode in 1 M NaOH solution) and a solar-to-oxygen conversion efficiency of 0.321%. Moreover, the photoanode showed no sign of decay over 20 h of photoelectrochemical water oxidation. (C) 2015 Elsevier B.V. All rights reserved.
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