Substrate temperature and thickness dependence of properties of boron and gallium co-doped ZnO films

Transparent conducting oxide films of boron and gallium co-doped ZnO (BGZO) were prepared on glass substrates by radio frequency magnetron sputtering at room temperature and 200 degrees C, respectively. The dependence of structural, electrical and optical properties on the thickness and substrate temperature were investigated. All films demonstrated c-axis preferred orientation and showed highly transparent in the visible wavelength region. With the increase thickness and substrate temperature, the grain size of BGZO films increased and the full width at half maximum decreased, the carrier mobility increased and resistivity decreased, which indicated that the crystallinity and conductivity of films were improved. The research also found that the optical band gap (E-g) of BGZO thin films decreased with increased substrate temperature and thickness.