The improvement of nitrogen doped Ge 2 Sb 2 Te 5 on the phase change memory resistance distributions

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Title
The improvement of nitrogen doped Ge 2 Sb 2 Te 5 on the phase change memory resistance distributions
Authors
Keywords
Phase change memory (PCM), Ge, 2, Sb, 2, Te, 5, (GST), Nitrogen doping, Resistance distributions
Journal
SOLID-STATE ELECTRONICS
Volume 116, Issue -, Pages 119-123
Publisher
Elsevier BV
Online
2015-11-21
DOI
10.1016/j.sse.2015.11.001

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