Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28nm node and beyond

Published 2016 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28nm node and beyond
Authors
Keywords
FDSOI, Ultra-thin BOX and body FDSOI, Multi-Vt, Back-biasing, Strain enhancement
Journal
SOLID-STATE ELECTRONICS
Volume 117, Issue -, Pages 37-59
Publisher
Elsevier BV
Online
2015-12-12
DOI
10.1016/j.sse.2015.11.006

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.