Circuit model for single-energy-level trap centers in FETs

Published 2016 View Full Article

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Title
Circuit model for single-energy-level trap centers in FETs
Authors
Keywords
Trapping, Microwave FET, GaN HEMT, Semiconductor device measurement, Semiconductor device modeling
Journal
SOLID-STATE ELECTRONICS
Volume 126, Issue -, Pages 143-151
Publisher
Elsevier BV
Online
2016-09-09
DOI
10.1016/j.sse.2016.08.005

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