Impact of temperature and programming method on the data retention of Cu/Al 2 O 3 -based conductive-bridge RAM operated at low-current (10 μA)

Title
Impact of temperature and programming method on the data retention of Cu/Al 2 O 3 -based conductive-bridge RAM operated at low-current (10 μA)
Authors
Keywords
RRAM, Conductive-bridging, CBRAM, PMC, Programming algorithm, Retention, Memory window
Journal
SOLID-STATE ELECTRONICS
Volume 125, Issue -, Pages 189-197
Publisher
Elsevier BV
Online
2016-07-22
DOI
10.1016/j.sse.2016.07.015

Ask authors/readers for more resources

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation