Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 31, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/31/5/055019
Keywords
AlGaN/GaN; HEMT; post-gate annealing; off-state leakage current; surface treatment
Categories
Funding
- Research Grants Council (RGC) theme-based research scheme (TRS) of the Hong Kong Special Administrative Region Government [T23-612/12-R]
- National Natural Science Foundation of China [51507131]
Ask authors/readers for more resources
We report on the reduction of off-state leakage current in A1GaN/GaN high electron mobility transistors (HEMTs) by a two-step process combining pre-gate surface treatment and post -gate annealing (PGA), which suppressed the two leakage paths, namely, lateral surface leakage and vertical tunneling leakage, separately. The lateral surface leakage current, which was mainly induced by the high-density trap states generated during the device isolation etching process, was significantly reduced by a low power 02 -plasma and HCl surface treatment process. The PGA process reduced the vertical tunneling leakage current by improving the Schottky contact quality of the transistor gate. Consequently, the device off-state leakage current was decreased by about 7 orders of magnitude and no degradation was introduced to the on -state performance, leading to a high on/off current ratio of 101 and steep subthreshold slope (SS) of 62 mV/dec. The origin and leakage suppression mechanisms are also investigated and discussed in detail.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available