Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects

Published 2016 View Full Article

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Title
Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 31, Issue 4, Pages 045009
Publisher
IOP Publishing
Online
2016-03-11
DOI
10.1088/0268-1242/31/4/045009

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