Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

Published 2016 View Full Article

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Title
Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 31, Issue 10, Pages 105007
Publisher
IOP Publishing
Online
2016-09-06
DOI
10.1088/0268-1242/31/10/105007

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