Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °C

Published 2016 View Full Article

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Title
Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °C
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 31, Issue 12, Pages 125007
Publisher
IOP Publishing
Online
2016-11-10
DOI
10.1088/0268-1242/31/12/125007

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