Journal
CHINESE PHYSICS LETTERS
Volume 32, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/32/7/077801
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Funding
- National Basic Research Program of China [2011CB922200, 2013CB922303]
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We quantitatively investigate the third-order optical nonlinear response of Co-doped ZnO thin films prepared by magnetron sputtering using the Z-scan method. The two-photon absorption and optical Kerr effect are revealed to contribute to the third-order nonlinear response of the Co-doped ZnO films. The nonlinear absorption coefficient beta is determined to be approximately 8.8 x 10(-5) cm/W and the third-order nonlinear susceptibility chi((3)) is 2.93 x 10(-6) esu. The defect-associated energy levels within the band gap are suggested to be responsible for the enhanced nonlinear response observed in Co-doped ZnO films.
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