Journal
PROGRESS IN PHOTOVOLTAICS
Volume 24, Issue 8, Pages 1142-1148Publisher
WILEY
DOI: 10.1002/pip.2764
Keywords
chalcopyrite thin-film solar cell; band alignment; alternative buffer layers; Zn(O; S); X-ray spectroscopy; inverse photoemission
Funding
- Department of Energy (DOE) through the F-PACE Partnership [ZEJ-2-22082-0.1]
- Impuls- und Vernetzungsfonds of the Helmholtz Association [VH-NG-423]
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The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se-2 interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se-2 system, we find an essentially flat (small-spike) conduction band alignment (here: a conduction band offset of (0.09 +/- 0.20)eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high-efficiency Zn(O,S)-based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH)(2), and possibly ZnSe. Copyright (c) 2016 John Wiley & Sons, Ltd.
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