Keywords
Heusler, Full-Heusler, Half-Heusler, Spintronics, Semiconductors, Half-metals, Magnetism, Spin polarization, Schottky barrier, Co, 2, MnSi, Co, 2, FeSi, Fe, 3, Ga, GaAs, NiMnSb, Spin transfer torque, Magnetic random access memory, MRAM, STT-RAM, MgO, GaAs, Tunneling anisotropic magnetoresistance (TAMR), Spin valve, Magnetic tunnel junction, MTJ, Spin polarization, Valence electron count (VEC), Slater–Pauling, Spin-LED, Thermodynamic stability, Lattice mismatch, Spin-FET, Perpendicular magnetization, Non-local voltage, Molecular beam epitaxy, MBE, Sputtering, Density of states, Point defects, Stoichiometry, Reflection high energy electron diffraction, RHEED, Magnetic moment
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